Samsung Electronics has launched a joint project to develop technology for next-generation semiconductors with Japan’s Toshiba Corporation and U.S.’s Intel Corporation.

Japan’s Nihon Keizai Shimbun said Saturday that the three firms are aiming to boost the capacity of semiconductors by making computer memory chips that have circuits thinner than ten nanometers. The postage stamp-sized chips will be able to store three times as much data.

The three companies will carry out the project at a research and development center in Japan’s city of Tsukuba in Ibaraki Prefecture until 2016. Samsung and Toshiba are expected to apply the newly-developed technology in NAND flash memory which are used in cell phones.